RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology ADOVE1A0834E 1GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
比较
A-DATA Technology ADOVE1A0834E 1GB vs Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
总分
A-DATA Technology ADOVE1A0834E 1GB
总分
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
需要考虑的原因
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
报告一个错误
低于PassMark测试中的延时,ns
26
94
左右 -262% 更低的延时
更快的读取速度,GB/s
18.6
1
测试中的平均数值
更快的写入速度,GB/s
16.2
1,165.4
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
94
26
读取速度,GB/s
1,882.0
18.6
写入速度,GB/s
1,165.4
16.2
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
305
3756
A-DATA Technology ADOVE1A0834E 1GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB RAM的比较
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5273EB0-CK0 4GB
Kingston HP32D4U8S8ME-8XR 8GB
A-DATA Technology ADOVE1A0834E 1GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
Kingston 99U5474-023.A00LF 4GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-4800C18-8GTRG 8GB
G Skill Intl F5-6400J3239G16G 16GB
Kingston 9905630-018.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Chun Well Technology Holding Limited D4U0826190B 8GB
Samsung M471B5273DH0-CK0 4GB
Kingston 9905625-142.A00G 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Kingston 9905665-017.A00G 4GB
Kingston 9905403-447.A00LF 4GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
Hexon Technology Pte Ltd HEXON 1GB
Ramaxel Technology RMSA3260MD78HAF-2666 8GB
Samsung M393B1K70DH0-YK0 8GB
Samsung M393B1K70DH0-CK0 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
V-GEN D4S8GL30A8TS5 8GB
SK Hynix HMT351S6CFR8C-PB 4GB
Corsair CMD32GX4M4C3200C16-R 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston KHX2933C17D4/8G 8GB
报告一个错误
×
Bug description
Source link