A-DATA Technology AM1L16BC8R2-B1NS 8GB vs Corsair CM4X32GC3200C16K2E 32GB

总分

A-DATA Technology AM1L16BC8R2-B1NS 8GB

A-DATA Technology AM1L16BC8R2-B1NS 8GB

总分

Corsair CM4X32GC3200C16K2E 32GB

Corsair CM4X32GC3200C16K2E 32GB

差异规格评论

差异

A-DATA Technology AM1L16BC8R2-B1NS 8GB

需要考虑的原因
A-DATA Technology AM1L16BC8R2-B1NS 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 41

左右 27% 更低的延时

Corsair CM4X32GC3200C16K2E 32GB

需要考虑的原因
Corsair CM4X32GC3200C16K2E 32GB

报告一个错误

更快的读取速度，GB/s

13.5 12.2

测试中的平均数值
更快的写入速度，GB/s

12.7 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM1L16BC8R2-B1NS 8GB

Corsair CM4X32GC3200C16K2E 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 41
读取速度，GB/s

12.2 13.5
写入速度，GB/s

9.0 12.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2236 3114

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology DQVE1908 512MB

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Samsung M393B1K70DH0-CH9 8GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Crucial Technology BLS4G4D240FSA.M8FADM 4GB

Crucial Technology BLS4G4D240FSA.M8FADM 4GB

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G Skill Intl F3-2666C12-8GTXD 8GB

Corsair CMD32GX4M2B2800C14 16GB

Corsair CMD32GX4M2B2800C14 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BL8G30C15U4B.8FE 8GB

Crucial Technology BL8G30C15U4B.8FE 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

Corsair CMR16GX4M2F4000C19 8GB

Corsair CMR16GX4M2F4000C19 8GB