G Skill Intl F2-8500CL5-2GBPI 2GB vs Kingston 9905665-011.A00G 4GB

总分

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分

Kingston 9905665-011.A00G 4GB

Kingston 9905665-011.A00G 4GB

差异规格评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB

需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB

报告一个错误

低于PassMark测试中的延时，ns

45 73

左右 38% 更低的延时
更快的读取速度，GB/s

6 13.6

测试中的平均数值

Kingston 9905665-011.A00G 4GB

需要考虑的原因
Kingston 9905665-011.A00G 4GB

报告一个错误

更快的写入速度，GB/s

5.7 2,935.8

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-8500CL5-2GBPI 2GB

Kingston 9905665-011.A00G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

45 73
读取速度，GB/s

6,336.8 13.6
写入速度，GB/s

2,935.8 5.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1144 1439

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 78T2863EHS-CF7 1GB

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TwinMOS 8DPT5MK8-TATP 2GB

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AMD R534G1601U1S-UO 4GB

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G Skill Intl F4-4133C17-8GTZR 8GB

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Micron Technology 4ATF1G64AZ-3G2E1 8GB

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A-DATA Technology AO1P24HCST2-BSCS 16GB

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Hyundai Inc AR36C18S8K2HU416R 8GB

Hyundai Inc AR36C18S8K2HU416R 8GB

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SK Hynix HMA41GR7MFR8N-TF 8GB

SK Hynix HMA41GR7MFR8N-TF 8GB

Kingston 9905403-515.A00LF 8GB

Kingston 9905403-515.A00LF 8GB

G Skill Intl F4-4000C18-16GTZR 16GB

G Skill Intl F4-4000C18-16GTZR 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Corsair CMV16GX4M1L2400C16 16GB

Corsair CMV16GX4M1L2400C16 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMU64GX4M4D3000C16 16GB

Corsair CMU64GX4M4D3000C16 16GB