Samsung M3 93T5750CZA-CE6 2GB vs Micron Technology 4ATF1G64AZ-3G2E1 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Micron Technology 4ATF1G64AZ-3G2E1 8GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 16.7

测试中的平均数值
更快的写入速度，GB/s

2,622.0 10.9

测试中的平均数值

Micron Technology 4ATF1G64AZ-3G2E1 8GB

需要考虑的原因
Micron Technology 4ATF1G64AZ-3G2E1 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 77

左右 -133% 更低的延时
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 33
读取速度，GB/s

3,405.2 16.7
写入速度，GB/s

2,622.0 10.9
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

763 2876

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Hewlett-Packard 7EH64AA# 8GB

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Corsair CM5S16GM4800A40K2 16GB

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G Skill Intl F4-3600C19-16GVRB 16GB

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Apacer Technology GD2.22428S.001 8GB

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SK Hynix HMA851S6DJR6N-XN 4GB

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Peak Electronics 256X64M-67E 2GB

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Corsair CMK16GX4M1E3200C16 16GB

Corsair CMK16GX4M1E3200C16 16GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Crucial Technology CT16G4SFD8213.C16FH1 16GB

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SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

A-DATA Technology AO1P26KC8T1-BPXS 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

Crucial Technology BLS4G4S26BFSD.8FBR2 4GB