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Samsung M393B1G70BH0-CK0 8GB
SK Hynix HMA851S6DJR6N-XN 4GB

Samsung M393B1G70BH0-CK0 8GB vs SK Hynix HMA851S6DJR6N-XN 4GB

总分
star star star star star
Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分
star star star star star
SK Hynix HMA851S6DJR6N-XN 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

差异 规格 评论

差异

Samsung M393B1G70BH0-CK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB
报告一个错误
SK Hynix HMA851S6DJR6N-XN 4GB 需要考虑的原因
SK Hynix HMA851S6DJR6N-XN 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    44 left arrow 51
    左右 -16% 更低的延时
  • 更快的读取速度，GB/s
    14.9 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.6 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-CK0 8GB
SK Hynix HMA851S6DJR6N-XN 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 44
  • 读取速度，GB/s
    9.8 left arrow 14.9
  • 写入速度，GB/s
    8.1 left arrow 11.6
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2208 left arrow 2191

Samsung M393B1G70BH0-CK0 8GB RAM的比较

TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB

SK Hynix HMA851S6DJR6N-XN 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Crucial Technology CT51264BD1339.M16F 4GB
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内存RAM
AMD AE34G1601U1 4GB
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G Skill Intl F4-2666C15-8GVR 8GB
G Skill Intl F4-2666C15-8GVR 8GB
内存RAM
Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
G Skill Intl F4-2400C15-16GFX 16GB
G Skill Intl F4-2400C15-16GFX 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
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Kingston 9905744-006.A00G 16GB
Kingston 9905744-006.A00G 16GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA81GR7AFR8N-UH 8GB
SK Hynix HMA81GR7AFR8N-UH 8GB
内存RAM
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Kingston KVR533D2N4 512MB
A-DATA Technology AM2P24HC8T1-BBFS 8GB
A-DATA Technology AM2P24HC8T1-BBFS 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
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Avant Technology W642GU44J2320NC 16GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Apacer Technology 78.B1GM3.C7W0B 4GB
Apacer Technology 78.B1GM3.C7W0B 4GB
内存RAM
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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Samsung 9905599-020.A00G 16GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Wilk Elektronik S.A. GR2133D464L15S/8G 8GB
Wilk Elektronik S.A. GR2133D464L15S/8G 8GB
内存RAM
Corsair CMX8GX3M2A2000C9 4GB
Corsair CMX8GX3M2A2000C9 4GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
内存RAM
Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
Crucial Technology CT16G4SFS832A.C8FB 16GB
Crucial Technology CT16G4SFS832A.C8FB 16GB
内存RAM
SK Hynix HMA425S6AFR6N-UH 2GB
SK Hynix HMA425S6AFR6N-UH 2GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
内存RAM