PNY Electronics PNY 2GB vs Micron Technology 4ATF1G64AZ-3G2E1 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Micron Technology 4ATF1G64AZ-3G2E1 8GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 33

左右 18% 更低的延时

Micron Technology 4ATF1G64AZ-3G2E1 8GB

需要考虑的原因
Micron Technology 4ATF1G64AZ-3G2E1 8GB

报告一个错误

更快的读取速度，GB/s

16.7 13.8

测试中的平均数值
更快的写入速度，GB/s

10.9 8.4

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 33
读取速度，GB/s

13.8 16.7
写入速度，GB/s

8.4 10.9
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2274 2876

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Corsair CMK32GX4M2C3333C16 16GB

Corsair CMK32GX4M2C3333C16 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

INTENSO 5641160 8GB

INTENSO 5641160 8GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Chun Well Technology Holding Limited D4U0830160B 8GB

Chun Well Technology Holding Limited D4U0830160B 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Corsair CMD32GX4M2B3000C15 16GB

Corsair CMD32GX4M2B3000C15 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

G Skill Intl F4-2133C15-8GRS 8GB

G Skill Intl F4-2133C15-8GRS 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP112S64CP6-Y5 1GB

Hynix Semiconductor (Hyundai Electronics) HYMP112S64CP6

GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Kingston X3XCFP-HYA 8GB

Kingston X3XCFP-HYA 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Wilk Elektronik S.A. GR3200D464L22S/16G 16GB

Wilk Elektronik S.A. GR3200D464L22S/16G 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

G Skill Intl F4-3000C16-8GSXWB 8GB

G Skill Intl F4-3000C16-8GSXWB 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Crucial Technology CT16G4SFRA32A.C16FP 16GB

Crucial Technology CT16G4SFRA32A.C16FP 16GB

Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

Samsung M393A2G40DBD-CP1???? 16GB

Samsung M393A2G40DBD-CP1???? 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB

SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB