A-DATA Technology AM2L16BC4R1-B0AS 4GB vs G Skill Intl F4-2666C19-8GNT 8GB

总分

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

总分

G Skill Intl F4-2666C19-8GNT 8GB

G Skill Intl F4-2666C19-8GNT 8GB

差异规格评论

差异

A-DATA Technology AM2L16BC4R1-B0AS 4GB

需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0AS 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时

G Skill Intl F4-2666C19-8GNT 8GB

需要考虑的原因
G Skill Intl F4-2666C19-8GNT 8GB

报告一个错误

更快的读取速度，GB/s

16.7 13.4

测试中的平均数值
更快的写入速度，GB/s

13.6 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2L16BC4R1-B0AS 4GB

G Skill Intl F4-2666C19-8GNT 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

13.4 16.7
写入速度，GB/s

7.8 13.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2181 3199

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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最新比较

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Samsung M393B5170FH0-CH9 4GB

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Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB

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Samsung M471A4G43AB1-CWE 32GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Corsair CMZ16GX3M2A2400C10 8GB

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G Skill Intl F3-2400C11-8-SR 8GB

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Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Crucial Technology CT8G4DFD8213.C16FAR1 8GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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Crucial Technology CT8G4DFS824A.C8FHD1 8GB

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Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Corsair CMR16GX4M2D3200C16 8GB

Corsair CMR16GX4M2D3200C16 8GB