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A-DATA Technology AM2L16BC4R1-B0AS 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
比较
A-DATA Technology AM2L16BC4R1-B0AS 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
总分
A-DATA Technology AM2L16BC4R1-B0AS 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0AS 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
31
左右 13% 更低的延时
更快的读取速度,GB/s
13.4
11.8
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
报告一个错误
更快的写入速度,GB/s
8.1
7.8
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
31
读取速度,GB/s
13.4
11.8
写入速度,GB/s
7.8
8.1
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2181
2354
A-DATA Technology AM2L16BC4R1-B0AS 4GB RAM的比较
Kingston 99U5403-185.A00LF 8GB
Kingston 9905403-410.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB RAM的比较
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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A-DATA Technology AM2L16BC4R1-B0AS 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N
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SK Hynix HYMP512S64CP8-Y5 1GB
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Kingston 9965525-140.A00LF 8GB
Chun Well Technology Holding Limited D4U1636181DC 16GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology BLS4G4D240FSC.8FBD2 4GB
报告一个错误
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Bug description
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