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A-DATA Technology AM2L16BC4R1-B0AS 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

总分
star star star star star
A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

差异 规格 评论

差异

A-DATA Technology AM2L16BC4R1-B0AS 4GB 需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0AS 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 30
    左右 10% 更低的延时
  • 更快的读取速度，GB/s
    13.4 left arrow 10
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
报告一个错误
  • 更快的写入速度，GB/s
    8.5 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 30
  • 读取速度，GB/s
    13.4 left arrow 10.0
  • 写入速度，GB/s
    7.8 left arrow 8.5
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2181 left arrow 2234

A-DATA Technology AM2L16BC4R1-B0AS 4GB RAM的比较

Kingston 99U5403-185.A00LF 8GB
Kingston 9905403-410.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB RAM的比较

Corsair CML16GX3M2A1600C10 8GB
Kingston 9905402-665.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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