Kingston 9905402-665.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

Kingston 9905402-665.A00LF 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

总分

Kingston 9905402-665.A00LF 4GB

Kingston 9905402-665.A00LF 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

差异规格评论

差异

Kingston 9905402-665.A00LF 4GB

需要考虑的原因
Kingston 9905402-665.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 30

左右 3% 更低的延时
更快的读取速度，GB/s

10.8 10

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

报告一个错误

更快的写入速度，GB/s

8.5 5.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905402-665.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 30
读取速度，GB/s

10.8 10.0
写入速度，GB/s

5.5 8.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1824 2234

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905402-665.A00LF 4GB

Kingston 9905402-665.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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A-DATA Technology DDR4 2400 16GB

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Hexon Technology Pte Ltd HEXON 1GB

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Gloway International (HK) STK4U2400D17081C 8GB

Kingston 99U5584-005.A00LF 4GB

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Crucial Technology BLS16G4D32AESC.M16FE 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

Kingmax Semiconductor GLLH23F-18KIIP------ 16GB