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SK Hynix HMT42GR7BFR4A-PB 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

SK Hynix HMT42GR7BFR4A-PB 16GB vs Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

总分
star star star star star
SK Hynix HMT42GR7BFR4A-PB 16GB

SK Hynix HMT42GR7BFR4A-PB 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

差异 规格 评论

差异

SK Hynix HMT42GR7BFR4A-PB 16GB 需要考虑的原因
SK Hynix HMT42GR7BFR4A-PB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 62
    左右 42% 更低的延时
  • 更快的读取速度，GB/s
    9.6 left arrow 7.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.6 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21% 更高的带宽
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
报告一个错误

规格

完整的技术规格清单
SK Hynix HMT42GR7BFR4A-PB 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    36 left arrow 62
  • 读取速度，GB/s
    9.6 left arrow 7.4
  • 写入速度，GB/s
    7.6 left arrow 5.9
  • 内存带宽，mbps
    12800 left arrow 10600
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2067 left arrow 1612

SK Hynix HMT42GR7BFR4A-PB 16GB RAM的比较

SK Hynix HMT42GR7AFR4A-PB 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM的比较

Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

SK Hynix HMT42GR7BFR4A-PB 16GB
SK Hynix HMT42GR7BFR4A-PB 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
内存RAM
Kingston 9905402-665.A00LF 4GB
Kingston 9905402-665.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Corsair CMD64GX4M4B2800C14 16GB
Corsair CMD64GX4M4B2800C14 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-CK0 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Essencore Limited IM4AGU88N26-GIIHA0 16GB
Essencore Limited IM4AGU88N26-GIIHA0 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB
内存RAM
Elpida EBJ40UG8BBU0-GN-F 4GB
Elpida EBJ40UG8BBU0-GN-F 4GB
Elpida EBJ40UG8BBU0-GN-F 4GB
Elpida EBJ40UG8BBU0-GN-F 4GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
INTENSO 5641162 8GB
INTENSO 5641162 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston 8ATF1G64AZ-2G1B1 8GB
Kingston 8ATF1G64AZ-2G1B1 8GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
G Skill Intl F4-3600C18-8GTRS 8GB
G Skill Intl F4-3600C18-8GTRS 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Gloway International (HK) STK4U2400D17081C 8GB
Gloway International (HK) STK4U2400D17081C 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Crucial Technology BLS16G4D32AESC.M16FE 16GB
Crucial Technology BLS16G4D32AESC.M16FE 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingmax Semiconductor GLLH23F-18KIIP------ 16GB
Kingmax Semiconductor GLLH23F-18KIIP------ 16GB
内存RAM