Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Samsung M392B2G70DM0-YH9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Samsung M392B2G70DM0-YH9 16GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

总分

Samsung M392B2G70DM0-YH9 16GB

Samsung M392B2G70DM0-YH9 16GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

报告一个错误

更快的读取速度，GB/s

7.4 5.5

测试中的平均数值
更快的写入速度，GB/s

5.9 3.4

测试中的平均数值

Samsung M392B2G70DM0-YH9 16GB

需要考虑的原因
Samsung M392B2G70DM0-YH9 16GB

报告一个错误

低于PassMark测试中的延时，ns

45 62

左右 -38% 更低的延时

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Samsung M392B2G70DM0-YH9 16GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

62 45
读取速度，GB/s

7.4 5.5
写入速度，GB/s

5.9 3.4
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

1612 1226

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR32D4U2S1ME-8 8GB

Kingston ACR32D4U2S1ME-8 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Kingston 9965600-011.A01G 16GB

Kingston 9965600-011.A01G 16GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB

Micron Technology 8ATF2G64AZ-3G2B1 16GB

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Crucial Technology CT16G4SFDFD4A.M16FH 16GB

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Samsung M378B1G73EB0-CK0 8GB

Samsung M378B1G73QH0-CK0 8GB

Samsung M378B1G73QH0-CK0 8GB