Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Samsung M393B1K70DH0-CH9 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Samsung M393B1K70DH0-CH9 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

总分

Samsung M393B1K70DH0-CH9 8GB

Samsung M393B1K70DH0-CH9 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

报告一个错误

Samsung M393B1K70DH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70DH0-CH9 8GB

报告一个错误

低于PassMark测试中的延时，ns

47 62

左右 -32% 更低的延时
更快的读取速度，GB/s

9.3 7.4

测试中的平均数值

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Samsung M393B1K70DH0-CH9 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

62 47
读取速度，GB/s

7.4 9.3
写入速度，GB/s

5.9 5.9
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

1612 1671

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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