Samsung M393B1K70DH0-CH9 8GB vs Samsung M393B1K70DH0-CK0 8GB

总分

Samsung M393B1K70DH0-CH9 8GB

Samsung M393B1K70DH0-CH9 8GB

总分

Samsung M393B1K70DH0-CK0 8GB

Samsung M393B1K70DH0-CK0 8GB

差异规格评论

差异

Samsung M393B1K70DH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70DH0-CH9 8GB

报告一个错误

低于PassMark测试中的延时，ns

47 49

左右 4% 更低的延时

Samsung M393B1K70DH0-CK0 8GB

需要考虑的原因
Samsung M393B1K70DH0-CK0 8GB

报告一个错误

更快的读取速度，GB/s

10.3 9.3

测试中的平均数值
更快的写入速度，GB/s

8.2 5.9

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70DH0-CH9 8GB

Samsung M393B1K70DH0-CK0 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

47 49
读取速度，GB/s

9.3 10.3
写入速度，GB/s

5.9 8.2
内存带宽，mbps

10600 12800

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

1671 2230

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C14-16GFX 16GB

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Samsung M391B5673EH1-CH9 2GB

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Panram International Corporation PUD42400C154G4NJK 4GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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Samsung M471A2K43BB1-CPB 16GB

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Transcend Information JM2666HLB-16G 16GB

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Asgard VMA45UG-MEC1U2AW1 8GB

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Corsair CMW128GX4M8X3600C18 16GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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G Skill Intl F4-3000C15-16GVR 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Essencore Limited KD4AGU88C-26N1900 16GB

Essencore Limited KD4AGU88C-26N1900 16GB

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

SK Hynix HMA82GS6CJR8N-V-V 16GB

SK Hynix HMA82GS6CJR8N-V-V 16GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

SK Hynix HMA41GU6AFR8N-TF 8GB

SK Hynix HMA41GU6AFR8N-TF 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Crucial Technology CT16G4S24AM.M16FB 16GB

Crucial Technology CT16G4S24AM.M16FB 16GB