RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3200C16-16GSXWB 16GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3200C16-16GSXWB 16GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
G Skill Intl F4-3200C16-16GSXWB 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
25
左右 4% 更低的延时
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-3200C16-16GSXWB 16GB
报告一个错误
更快的读取速度,GB/s
19.6
16
测试中的平均数值
更快的写入速度,GB/s
15.1
12.5
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3200C16-16GSXWB 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
25
读取速度,GB/s
16.0
19.6
写入速度,GB/s
12.5
15.1
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
3774
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3200C16-16GSXWB 16GB RAM的比较
Panram International Corporation W4U2400PS-4G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
G Skill Intl F4-3200C14-8GTZ 8GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT4G4DFS8213.C8FHP 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
Micron Technology TEAMGROUP-UD4-3000 16GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-4600C18-8GTZR 8GB
PUSKILL DDR3 1600 8G 8GB
SK Hynix HMA84GR7MFR4N-TF 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C16-16GSXWB 16GB
Kingston 9905403-090.A01LF 4GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
G Skill Intl F4-3600C19-8GSXKB 8GB
Team Group Inc. Vulcan-1600 4GB
Kingston 99U5713-003.A00G 4GB
SK Hynix HYMP112U64CP8-S5 1GB
AMD R744G2400U1S 4GB
AMD R538G1601U2S-UO 8GB
Corsair CM4B8G7L2666A16K2-O 8GB
Crucial Technology CT25664AA800.M16FG 2GB
Samsung M471A2K43DB1-CWE 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
报告一个错误
×
Bug description
Source link