RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3200C16-16GSXWB 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3200C16-16GSXWB 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F4-3200C16-16GSXWB 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
25
Around 4% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
G Skill Intl F4-3200C16-16GSXWB 16GB
Report a bug
Faster reading speed, GB/s
19.6
16
Average value in the tests
Faster write speed, GB/s
15.1
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3200C16-16GSXWB 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
25
Read speed, GB/s
16.0
19.6
Write speed, GB/s
12.5
15.1
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
3774
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3200C16-16GSXWB 16GB RAM comparisons
Panram International Corporation W4U2400PS-4G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C16-16GSXWB 16GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-3200C16-16GTZKO 16GB
G Skill Intl F5-6400J3239G16G 16GB
Apacer Technology 78.CAGQ7.ARC0B 8GB
Samsung M378B5773DH0-CH9 2GB
Kingston 9905624-009.A00G 8GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-2933C16-8GFX 8GB
Kingston KVR533D2N4 512MB
Corsair CMD32GX4M4C3466C16W 8GB
A-DATA Technology DQKD1A08 1GB
Kingston KHX2666C13D4/4GX 4GB
Kingston 9965525-140.A00LF 8GB
Micron Technology 16ATF2G64AZ-2G6J1 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Micron Technology 16ATF2G64AZ-2G1A1 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Corsair CMK32GX4M4B3733C17 8GB
A-DATA Technology DOVF1B163G2G 2GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Mushkin MR[A/B]4U320LLLM8G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SF4641G8CKHI6DFSEG 8GB
Kingston KVR533D2N4 512MB
SK Hynix HMA82GU6AFR8N-TF 16GB
Report a bug
×
Bug description
Source link