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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
比较
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
总分
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
总分
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
差异
规格
评论
差异
需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
更快的读取速度,GB/s
2
13.1
测试中的平均数值
需要考虑的原因
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
报告一个错误
低于PassMark测试中的延时,ns
77
96
左右 -25% 更低的延时
更快的写入速度,GB/s
5.5
1,336.0
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
96
77
读取速度,GB/s
2,725.2
13.1
写入速度,GB/s
1,336.0
5.5
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
438
1440
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较
takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston SMD4-S8G48HJ-26V 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M393A1G40EB1-CRC 8GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT8G4DFS8213.M8FB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
SK Hynix HMA84GR7AFR4N-UH 32GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT16G4SFD824A.M16FR 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
Crucial Technology CT16G4DFD8213.C16FH1 16GB
Crucial Technology CT16G4DFD8213.C16FBR 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
G Skill Intl F4-3200C16-8GVKB 8GB
Samsung DDR3 8GB 1600MHz 8GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB
Kingston SNY1600S11-4G-EDEG 4GB
Kingston LV36D4U1S8HD-8XR 8GB
报告一个错误
×
Bug description
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