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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
takeMS International AG TMS1GB264C081805QI 1GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs takeMS International AG TMS1GB264C081805QI 1GB

总分
star star star star star
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分
star star star star star
takeMS International AG TMS1GB264C081805QI 1GB

takeMS International AG TMS1GB264C081805QI 1GB

差异 规格 评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB 需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 2
    测试中的平均数值
takeMS International AG TMS1GB264C081805QI 1GB 需要考虑的原因
takeMS International AG TMS1GB264C081805QI 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    60 left arrow 96
    左右 -60% 更低的延时
  • 更快的写入速度，GB/s
    1,834.3 left arrow 1,336.0
    测试中的平均数值

规格

完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
takeMS International AG TMS1GB264C081805QI 1GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR2
  • PassMark中的延时，ns
    96 left arrow 60
  • 读取速度，GB/s
    2,725.2 left arrow 2,585.1
  • 写入速度，GB/s
    1,336.0 left arrow 1,834.3
  • 内存带宽，mbps
    6400 left arrow 6400
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 800 MHz
  • 排名PassMark (越多越好)
    438 left arrow 519

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较

Micron Technology 16HTF12864AY-40EB1 1GB

takeMS International AG TMS1GB264C081805QI 1GB RAM的比较

Kingston ACR26D4S9S1KA-4 4GB
Samsung SF4641G8CKHI6DFSDS 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
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Crucial Technology CT8G4DFS824A.C8FE 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
takeMS International AG TMS1GB264C081805QI 1GB
takeMS International AG TMS1GB264C081805QI 1GB
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A-DATA Technology DDR4 2400 16GB
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Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
Patriot Memory (PDP Systems) 3600 C18 Series 32GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
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Corsair CM4X32GC3200C16K2E 32GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
Crucial Technology CT51264BA160B.C16F 4GB
Crucial Technology CT51264BA160B.C16F 4GB
SK Hynix HMA82GR7AFR8N-VK 16GB
SK Hynix HMA82GR7AFR8N-VK 16GB
内存RAM
Crucial Technology BLS8G4D240FSC.16FBD 8GB
Crucial Technology BLS8G4D240FSC.16FBD 8GB
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Corsair CMK16GX4M2D3200C16 8GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
Kingston KC5N22-MIE 16GB
Kingston KC5N22-MIE 16GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
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Kingston 9965525-153.A00LF 8GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
SK Hynix HMT125U6DFR8C-H9 2GB
SK Hynix HMT125U6DFR8C-H9 2GB
内存RAM
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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
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V-GEN D4S8GL32A8TS 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology 78.CAGPP.ARW0B 8GB
Apacer Technology 78.CAGPP.ARW0B 8GB
内存RAM