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Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
A-DATA Technology AD4S320038G22-B 8GB

Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB vs A-DATA Technology AD4S320038G22-B 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB

Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB

总分
star star star star star
A-DATA Technology AD4S320038G22-B 8GB

A-DATA Technology AD4S320038G22-B 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
报告一个错误
A-DATA Technology AD4S320038G22-B 8GB 需要考虑的原因
A-DATA Technology AD4S320038G22-B 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 67
    左右 -72% 更低的延时
  • 更快的读取速度，GB/s
    15.1 left arrow 6.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.1 left arrow 3.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
A-DATA Technology AD4S320038G22-B 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    67 left arrow 39
  • 读取速度，GB/s
    6.2 left arrow 15.1
  • 写入速度，GB/s
    3.4 left arrow 10.1
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1076 left arrow 2478

Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB RAM的比较

Corsair CMW32GX4M4K4266C19 8GB

A-DATA Technology AD4S320038G22-B 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
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