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Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
A-DATA Technology AD4S320038G22-B 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB vs A-DATA Technology AD4S320038G22-B 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
Overall score
A-DATA Technology AD4S320038G22-B 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
Report a bug
Reasons to consider
A-DATA Technology AD4S320038G22-B 8GB
Report a bug
Below the latency in the PassMark tests, ns
39
67
Around -72% lower latency
Faster reading speed, GB/s
15.1
6.2
Average value in the tests
Faster write speed, GB/s
10.1
3.4
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
A-DATA Technology AD4S320038G22-B 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
67
39
Read speed, GB/s
6.2
15.1
Write speed, GB/s
3.4
10.1
Memory bandwidth, mbps
12800
25600
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
Timings / Clock speed
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
1076
2478
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
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