A-DATA Technology AM2L16BC4R1-B0AS 4GB vs Kingston 9965669-027.A00G 16GB

总分

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

总分

Kingston 9965669-027.A00G 16GB

Kingston 9965669-027.A00G 16GB

差异规格评论

差异

A-DATA Technology AM2L16BC4R1-B0AS 4GB

需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0AS 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 44

左右 39% 更低的延时
更快的读取速度，GB/s

13.4 12.5

测试中的平均数值

Kingston 9965669-027.A00G 16GB

需要考虑的原因
Kingston 9965669-027.A00G 16GB

报告一个错误

更快的写入速度，GB/s

9.7 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Kingston 9965669-027.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 44
读取速度，GB/s

13.4 12.5
写入速度，GB/s

7.8 9.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2181 2452

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471A1K43DB1-CWE 8GB

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Micron Technology 8ATF1G64HZ-3G2J1 8GB

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Corsair CMW64GX4M8Z2933C16 8GB

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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Ramaxel Technology RMSA3260NA78HAF-2666 8GB

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Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Corsair CMK128GX4M8B3333C16 16GB

Corsair CMK128GX4M8B3333C16 16GB

EVGA 16G-D3-1600-MR 8GB

EVGA 16G-D3-1600-MR 8GB

Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB

Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

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