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A-DATA Technology AM2L16BC4R1-B0AS 4GB
Micron Technology 16ATF2G64HZ-2G3B1 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB vs Micron Technology 16ATF2G64HZ-2G3B1 16GB

总分
star star star star star
A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

总分
star star star star star
Micron Technology 16ATF2G64HZ-2G3B1 16GB

Micron Technology 16ATF2G64HZ-2G3B1 16GB

差异 规格 评论

差异

A-DATA Technology AM2L16BC4R1-B0AS 4GB 需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0AS 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 39
    左右 31% 更低的延时
Micron Technology 16ATF2G64HZ-2G3B1 16GB 需要考虑的原因
Micron Technology 16ATF2G64HZ-2G3B1 16GB
报告一个错误
  • 更快的读取速度，GB/s
    13.7 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.5 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Micron Technology 16ATF2G64HZ-2G3B1 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 39
  • 读取速度，GB/s
    13.4 left arrow 13.7
  • 写入速度，GB/s
    7.8 left arrow 8.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2181 left arrow 2364

A-DATA Technology AM2L16BC4R1-B0AS 4GB RAM的比较

Kingston 99U5403-185.A00LF 8GB
Kingston 9905403-410.A00LF 4GB

Micron Technology 16ATF2G64HZ-2G3B1 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Kingston KWTHG4-MIE 16GB
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Samsung M3 78T2863QZS-CF7 1GB
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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Wilk Elektronik S.A. IR2400D464L15S/8G 8GB
Wilk Elektronik S.A. IR2400D464L15S/8G 8GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
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Crucial Technology CT8G4DFS8213.C8FBD1 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Micron Technology 16ATF2G64HZ-2G3B1 16GB
Micron Technology 16ATF2G64HZ-2G3B1 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
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Samsung M386A8K40BMB-CPB 64GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
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内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
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Kingston KHX2933C17S4/16G 16GB
内存RAM
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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Gold Key Technology Co Ltd NMUD416E82-4000F 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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G Skill Intl F4-2800C15-4GVRB 4GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
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G Skill Intl F2-8500CL5-2GBPI 2GB
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Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
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