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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A5143SB1-CRC 4GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Samsung M471A5143SB1-CRC 4GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
Samsung M471A5143SB1-CRC 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
更快的读取速度,GB/s
16.9
14.9
测试中的平均数值
更快的写入速度,GB/s
12.0
10.6
测试中的平均数值
需要考虑的原因
Samsung M471A5143SB1-CRC 4GB
报告一个错误
低于PassMark测试中的延时,ns
24
29
左右 -21% 更低的延时
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A5143SB1-CRC 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
24
读取速度,GB/s
16.9
14.9
写入速度,GB/s
12.0
10.6
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2601
2196
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Samsung M471A5143SB1-CRC 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Team Group Inc. TEAMGROUP-UD4-3733 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
报告一个错误
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Bug description
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