A-DATA Technology AM2L16BC4R1-B0AS 4GB vs Micron Technology 8ATF1G64HZ-2G6D1 8GB

总分

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

总分

Micron Technology 8ATF1G64HZ-2G6D1 8GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

差异规格评论

差异

A-DATA Technology AM2L16BC4R1-B0AS 4GB

需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0AS 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 34

左右 21% 更低的延时

Micron Technology 8ATF1G64HZ-2G6D1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-2G6D1 8GB

报告一个错误

更快的读取速度，GB/s

15.8 13.4

测试中的平均数值
更快的写入速度，GB/s

12.4 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 34
读取速度，GB/s

13.4 15.8
写入速度，GB/s

7.8 12.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2181 2830

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Ramaxel Technology RMUA5110MH78HAF-2666 8GB

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Samsung 1600 CL10 Series 8GB

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Corsair CMK32GX5M2B5600C36 16GB

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Corsair CMK32GX4M2K3600C16 16GB

Corsair CMK32GX4M2K3600C16 16GB

Samsung M471B1G73BH0-YK0 8GB

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Transcend Information TS1GSH64V4B 8GB

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Mushkin MB[A/B]4U240FFFF16G 16GB

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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Ramsta Ramsta-2666MHz-4G 4GB

Ramsta Ramsta-2666MHz-4G 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Patriot Memory (PDP Systems) 4000 C20 Series 8GB

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Kingston 9905458-017.A01LF 4GB

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Corsair CMD8GX4M2B3466C18 4GB

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Kingston HP32D4U8S8HD-8X 8GB

Kingston HP32D4U8S8HD-8X 8GB