A-DATA Technology AM2L16BC4R1-B0AS 4GB vs Samsung M393A2K40CB2-CTD 16GB

总分

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

总分

Samsung M393A2K40CB2-CTD 16GB

Samsung M393A2K40CB2-CTD 16GB

差异规格评论

差异

A-DATA Technology AM2L16BC4R1-B0AS 4GB

需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0AS 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 52

左右 48% 更低的延时
更快的读取速度，GB/s

13.4 10

测试中的平均数值
更快的写入速度，GB/s

7.8 7.3

测试中的平均数值

Samsung M393A2K40CB2-CTD 16GB

需要考虑的原因
Samsung M393A2K40CB2-CTD 16GB

报告一个错误

更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Samsung M393A2K40CB2-CTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 52
读取速度，GB/s

13.4 10.0
写入速度，GB/s

7.8 7.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2181 2306

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T3354BZ0-CCC 256MB

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Kingston KHX2133C13S4/16G 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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G Skill Intl F4-2400C17-4GFT 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Gold Key Technology Co Ltd GKE160SO102408-2933 16GB

Gold Key Technology Co Ltd GKE160SO102408-2933 16GB

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Kingston 9965525-155.A00LF 8GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB