A-DATA Technology AM2L16BC4R1-B0AS 4GB vs SK Hynix HMA82GS6CJR8N-UH 16GB

总分

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

总分

SK Hynix HMA82GS6CJR8N-UH 16GB

SK Hynix HMA82GS6CJR8N-UH 16GB

差异规格评论

差异

A-DATA Technology AM2L16BC4R1-B0AS 4GB

需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0AS 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 81

左右 67% 更低的延时
更快的读取速度，GB/s

13.4 12.7

测试中的平均数值
更快的写入速度，GB/s

7.8 6.5

测试中的平均数值

SK Hynix HMA82GS6CJR8N-UH 16GB

需要考虑的原因
SK Hynix HMA82GS6CJR8N-UH 16GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2L16BC4R1-B0AS 4GB

SK Hynix HMA82GS6CJR8N-UH 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 81
读取速度，GB/s

13.4 12.7
写入速度，GB/s

7.8 6.5
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2181 1460

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston KN2M64-ETB 8GB

Kingston KN2M64-ETB 8GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB

Crucial Technology CT8G4SFRA32A.C16FG 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Corsair CMK32GX4M2L3000C15 16GB

Corsair CMK32GX4M2L3000C15 16GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Kingston X6TCK6-MIE 32GB

Kingston X6TCK6-MIE 32GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Avexir Technologies Corporation T-20181206 8GB

Avexir Technologies Corporation T-20181206 8GB

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

G Skill Intl F4-3000C16-16GTZN 16GB

G Skill Intl F4-3000C16-16GTZN 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Crucial Technology BL8G36C16U4R.M8FE1 8GB

Crucial Technology BL8G36C16U4R.M8FE1 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378A1K43BB2-CTD 8GB

Samsung M378A1K43BB2-CTD 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-2400C17-4GIS 4GB

G Skill Intl F4-2400C17-4GIS 4GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-2133C15-8GNS 8GB

G Skill Intl F4-2133C15-8GNS 8GB

Kingston SNY1600S11-4G-EDEG 4GB

Kingston SNY1600S11-4G-EDEG 4GB

G Skill Intl F4-3600C14-16GTZRA 16GB

G Skill Intl F4-3600C14-16GTZRA 16GB

Kingston HX316C10F/8 8GB

Kingston HX316C10F/8 8GB

Smart Modular SMU4TDC3C0K0464SCG 4GB

Smart Modular SMU4TDC3C0K0464SCG 4GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-3200C14-32GVK 32GB

G Skill Intl F4-3200C14-32GVK 32GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB