A-DATA Technology AM2L16BC4R1-B0AS 4GB vs Team Group Inc. TEAMGROUP-D4-3733 8GB

总分

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

总分

Team Group Inc. TEAMGROUP-D4-3733 8GB

Team Group Inc. TEAMGROUP-D4-3733 8GB

差异规格评论

差异

A-DATA Technology AM2L16BC4R1-B0AS 4GB

需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0AS 4GB

报告一个错误

Team Group Inc. TEAMGROUP-D4-3733 8GB

需要考虑的原因
Team Group Inc. TEAMGROUP-D4-3733 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 27

左右 -42% 更低的延时
更快的读取速度，GB/s

20 13.4

测试中的平均数值
更快的写入速度，GB/s

16.4 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Team Group Inc. TEAMGROUP-D4-3733 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 19
读取速度，GB/s

13.4 20.0
写入速度，GB/s

7.8 16.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2181 3521

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Team Group Inc. TEAMGROUP-D4-3733 8GB

Team Group Inc. TEAMGROUP-D4-3733 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

A-DATA Technology AO1P24HC4N2-BWCS 4GB

A-DATA Technology AO1P24HC4N2-BWCS 4GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

G Skill Intl F4-3200C15-8GTZSK 8GB

G Skill Intl F4-3200C15-8GTZSK 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3600C18-32GTRS 32GB

G Skill Intl F4-3600C18-32GTRS 32GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

G Skill Intl F4-2666C15-16GVK 16GB

G Skill Intl F4-2666C15-16GVK 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Crucial Technology CB16GU2666.C8ET 16GB

Crucial Technology CB16GU2666.C8ET 16GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Crucial Technology CT16G4DFS8266.C8FB 16GB

Crucial Technology CT16G4DFS8266.C8FB 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Corsair CMK16GX4M4A2400C14 4GB

Corsair CMK16GX4M4A2400C14 4GB

Crucial Technology CT51264BF160B.M16F 4GB

Crucial Technology CT51264BF160B.M16F 4GB

G Skill Intl F4-4800C19-8GTZRC 8GB

G Skill Intl F4-4800C19-8GTZRC 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Kingston K821PJ-MID 16GB

Kingston K821PJ-MID 16GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

Kingston 99U5474-022.A00LF 2GB

Kingston 99U5474-022.A00LF 2GB

GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB

GIGA - BYTE Technology Co Ltd AR32C16S8K2HU416R 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB