A-DATA Technology AM2L16BC4R1-B0CS 4GB vs ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

总分

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

总分

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

差异规格评论

差异

A-DATA Technology AM2L16BC4R1-B0CS 4GB

需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0CS 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 37

左右 30% 更低的延时

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

需要考虑的原因
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

报告一个错误

更快的读取速度，GB/s

21.4 9.8

测试中的平均数值
更快的写入速度，GB/s

14.3 4.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2L16BC4R1-B0CS 4GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 37
读取速度，GB/s

9.8 21.4
写入速度，GB/s

4.6 14.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1560 3448

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Teikon TMA41GU6AFR8N-TFSC 8GB

Teikon TMA41GU6AFR8N-TFSC 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

SK Hynix HMA82GU6AFR8N-UH 16GB

SK Hynix HMA82GU6AFR8N-UH 16GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Crucial Technology CT16G4SFD824A.M16FJ 16GB

Crucial Technology CT16G4SFD824A.M16FJ 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Samsung M391A1G43EB1-CPB 8GB

Samsung M391A1G43EB1-CPB 8GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-2400C17-4GIS 4GB

G Skill Intl F4-2400C17-4GIS 4GB

Kingston KHX2800C14D4/8GX 8GB

Kingston KHX2800C14D4/8GX 8GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Kingston K821PJ-MIB 16GB

Kingston K821PJ-MIB 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Crucial Technology BL32G32C16U4WL.M16FB 32GB

Crucial Technology BL32G32C16U4WL.M16FB 32GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Crucial Technology BLS4G4S26BFSD.8FBD2 4GB

Crucial Technology BLS4G4S26BFSD.8FBD2 4GB

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMK32GX4M4B2800C14 8GB

Corsair CMK32GX4M4B2800C14 8GB