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A-DATA Technology AM2L16BC4R1-B0CS 4GB
G Skill Intl F4-2400C17-16GIS 16GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB vs G Skill Intl F4-2400C17-16GIS 16GB

总分
star star star star star
A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

总分
star star star star star
G Skill Intl F4-2400C17-16GIS 16GB

G Skill Intl F4-2400C17-16GIS 16GB

差异 规格 评论

差异

A-DATA Technology AM2L16BC4R1-B0CS 4GB 需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0CS 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 31
    左右 16% 更低的延时
G Skill Intl F4-2400C17-16GIS 16GB 需要考虑的原因
G Skill Intl F4-2400C17-16GIS 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.7 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.8 left arrow 4.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AM2L16BC4R1-B0CS 4GB
G Skill Intl F4-2400C17-16GIS 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 31
  • 读取速度，GB/s
    9.8 left arrow 16.7
  • 写入速度，GB/s
    4.6 left arrow 9.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1560 left arrow 2888

A-DATA Technology AM2L16BC4R1-B0CS 4GB RAM的比较

A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CMU32GX4M4C3200C16 8GB

G Skill Intl F4-2400C17-16GIS 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
G Skill Intl F4-2400C17-16GIS 16GB
G Skill Intl F4-2400C17-16GIS 16GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Corsair CMV8GX4M1A2666C18 8GB
Corsair CMV8GX4M1A2666C18 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Golden Empire CL14-16-16 D4-3000 4GB
Golden Empire CL14-16-16 D4-3000 4GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston 9905624-043.A00G 8GB
Kingston 9905624-043.A00G 8GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TFT1 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-3200C16-32GTZR 32GB
G Skill Intl F4-3200C16-32GTZR 32GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology BLS16G4D26BFSE.16FD 16GB
Crucial Technology BLS16G4D26BFSE.16FD 16GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Apacer Technology D12.2356WS.001 8GB
Apacer Technology D12.2356WS.001 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Kingston K821PJ-MIB 16GB
Kingston K821PJ-MIB 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Golden Empire CL15-15-15 D4-2133 8GB
Golden Empire CL15-15-15 D4-2133 8GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Kingston 9905702-184.A00G 8GB
Kingston 9905702-184.A00G 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Kingston KHX3333C17D4/4GX 4GB
Kingston KHX3333C17D4/4GX 4GB
内存RAM