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A-DATA Technology AM2L16BC4R1-B0CS 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB vs SK Hynix V-GeN D4H4GL30A8TX5 4GB

总分
star star star star star
A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

总分
star star star star star
SK Hynix V-GeN D4H4GL30A8TX5 4GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB

差异 规格 评论

差异

A-DATA Technology AM2L16BC4R1-B0CS 4GB 需要考虑的原因
A-DATA Technology AM2L16BC4R1-B0CS 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 73
    左右 64% 更低的延时
SK Hynix V-GeN D4H4GL30A8TX5 4GB 需要考虑的原因
SK Hynix V-GeN D4H4GL30A8TX5 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.8 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.4 left arrow 4.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AM2L16BC4R1-B0CS 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 73
  • 读取速度，GB/s
    9.8 left arrow 15.8
  • 写入速度，GB/s
    4.6 left arrow 8.4
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1560 left arrow 1822

A-DATA Technology AM2L16BC4R1-B0CS 4GB RAM的比较

A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CMU32GX4M4C3200C16 8GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
RAM Latency Calculator
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最新比较

Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMK16GX4M2K4400C19 8GB
Corsair CMK16GX4M2K4400C19 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
G Skill Intl F4-4000C19-4GVK 4GB
G Skill Intl F4-4000C19-4GVK 4GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kingston KYXC0V-MIB 16GB
Kingston KYXC0V-MIB 16GB
内存RAM
Ramaxel Technology RMN1740HC48D8F667A 2GB
Ramaxel Technology RMN1740HC48D8F667A 2GB
Corsair CMD64GX4M4B3333C16 16GB
Corsair CMD64GX4M4B3333C16 16GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Crucial Technology CT32G4SFD832A.C16FB 32GB
Crucial Technology CT32G4SFD832A.C16FB 32GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Team Group Inc. TEAMGROUP-UD4-2933 8GB
Team Group Inc. TEAMGROUP-UD4-2933 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CMD32GX4M4B3866C18 8GB
Corsair CMD32GX4M4B3866C18 8GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
G Skill Intl F4-3000C16-16GTZN 16GB
G Skill Intl F4-3000C16-16GTZN 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston 9905625-011.A00G 8GB
Kingston 9905625-011.A00G 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Hewlett-Packard 7TE39AA#ABC 8GB
Hewlett-Packard 7TE39AA#ABC 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
SK Hynix HMA851U6CJR6N-UH 4GB
SK Hynix HMA851U6CJR6N-UH 4GB
内存RAM