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A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3600C17-8GTZSW 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB vs G Skill Intl F4-3600C17-8GTZSW 8GB

总分
star star star star star
A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

总分
star star star star star
G Skill Intl F4-3600C17-8GTZSW 8GB

G Skill Intl F4-3600C17-8GTZSW 8GB

差异 规格 评论

差异

A-DATA Technology AM2U16BC4P2-B05B 4GB 需要考虑的原因
A-DATA Technology AM2U16BC4P2-B05B 4GB
报告一个错误
G Skill Intl F4-3600C17-8GTZSW 8GB 需要考虑的原因
G Skill Intl F4-3600C17-8GTZSW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 26
    左右 -53% 更低的延时
  • 更快的读取速度，GB/s
    21.6 left arrow 14
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.7 left arrow 9.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3600C17-8GTZSW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 17
  • 读取速度，GB/s
    14.0 left arrow 21.6
  • 写入速度，GB/s
    9.1 left arrow 17.7
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2330 left arrow 3702

A-DATA Technology AM2U16BC4P2-B05B 4GB RAM的比较

Kingston EBJ81UG8BBW0-GN-F 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-3600C17-8GTZSW 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Kingston 9905624-051.A00G 8GB
Kingston 9905624-051.A00G 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3600C17-8GTZSW 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CMWX16GC3000C15W4 16GB
Corsair CMWX16GC3000C15W4 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Kingston X2YH1K-MIE 16GB
Kingston X2YH1K-MIE 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston HP26D4U9D8HC-16X 16GB
Kingston HP26D4U9D8HC-16X 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Panram International Corporation PUD43000C158G2NJK 8GB
Panram International Corporation PUD43000C158G2NJK 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Kingston MSI26D4S9D8ME-16 16GB
Kingston MSI26D4S9D8ME-16 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Micron Technology 18ASF2G72PDZ-2G6D1 16GB
Micron Technology 18ASF2G72PDZ-2G6D1 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingston 9932291-002.A00G 4GB
Kingston 9932291-002.A00G 4GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Corsair CMK32GX4M2F4000C19 16GB
Corsair CMK32GX4M2F4000C19 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMK8GX4M2B4266C19 4GB
Corsair CMK8GX4M2B4266C19 4GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
Kingmax Semiconductor GLLH23F-18KIIP------ 16GB
Kingmax Semiconductor GLLH23F-18KIIP------ 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Hewlett-Packard 7EH64AA# 8GB
Hewlett-Packard 7EH64AA# 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Samsung M378A1K43EB2-CVF 8GB
Samsung M378A1K43EB2-CVF 8GB
内存RAM