RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology AM2U16BC4P2-B05B 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
比较
A-DATA Technology AM2U16BC4P2-B05B 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
总分
A-DATA Technology AM2U16BC4P2-B05B 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology AM2U16BC4P2-B05B 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
28
左右 7% 更低的延时
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
报告一个错误
更快的读取速度,GB/s
16.2
14
测试中的平均数值
更快的写入速度,GB/s
12.7
9.1
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
A-DATA Technology AM2U16BC4P2-B05B 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
28
读取速度,GB/s
14.0
16.2
写入速度,GB/s
9.1
12.7
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2330
2417
A-DATA Technology AM2U16BC4P2-B05B 4GB RAM的比较
Kingston EBJ81UG8BBW0-GN-F 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB RAM的比较
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT51264BF160BJ.M8F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BL16G36C16U4B.M8FB1 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Avant Technology W641GU67J5213N8 8GB
SK Hynix HYMP125U64CP8-S6 2GB
Corsair CMW16GX4M2D3000C16 8GB
Crucial Technology CT25664AA800.M16FG 2GB
G Skill Intl F4-4400C18-8GTRG 8GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-2800C16-8GRR 8GB
SK Hynix HYMP164U64CP6-Y5 512MB
Crucial Technology BLS8G4D32AESCK.M8FE 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT4G4DFS8213.C8FAR2 4GB
Samsung M471B1G73DB0-YK0 8GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
Samsung M393B2G70BH0-YK0 16GB
V-GEN D4H16GS24A8 16GB
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-2400C15-4GVR 4GB
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Panram International Corporation PUD42400C154G2NJW 4GB
SK Hynix HMA851S6CJR6N-VK 4GB
SK Hynix HMA81GS6JJR8N-VK 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
报告一个错误
×
Bug description
Source link