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A-DATA Technology AM2U16BC4P2-B05B 4GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
比较
A-DATA Technology AM2U16BC4P2-B05B 4GB vs Micron Technology 16ATF2G64HZ-2G1B1 16GB
总分
A-DATA Technology AM2U16BC4P2-B05B 4GB
总分
Micron Technology 16ATF2G64HZ-2G1B1 16GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology AM2U16BC4P2-B05B 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
36
左右 28% 更低的延时
更快的读取速度,GB/s
14
13.9
测试中的平均数值
需要考虑的原因
Micron Technology 16ATF2G64HZ-2G1B1 16GB
报告一个错误
更快的写入速度,GB/s
10.1
9.1
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
A-DATA Technology AM2U16BC4P2-B05B 4GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
36
读取速度,GB/s
14.0
13.9
写入速度,GB/s
9.1
10.1
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2330
2581
A-DATA Technology AM2U16BC4P2-B05B 4GB RAM的比较
Kingston EBJ81UG8BBW0-GN-F 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Kingston 99U5663-007.A00G 16GB
Kingston 9905403-011.A03LF 2GB
Samsung M378A1K43BB1-CRC 8GB
Kingston 99U5458-008.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3200C16-16GTRG 16GB
Kingston 9905471-006.A01LF 4GB
Crucial Technology BL16G36C16U4RL.M8FB1 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
Peak Electronics 256X64M-67E 2GB
Ramaxel Technology RMUA5120ME86H9F-2666 4GB
Samsung M471B5173DB0-YK0 4GB
Kingston 9905702-137.A00G 8GB
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-3600C14-16GTRG 16GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-3333C16-8GVR 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston 9965640-006.A01G 32GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
G Skill Intl F4-3466C16-16GTZSW 16GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology BLE8G4D34AEEAK.K8FB 8GB
A-DATA Technology VDQVE1B16 2GB
Samsung M378A5244CB0-CVF 4GB
报告一个错误
×
Bug description
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