RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs Micron Technology 16ATF2G64HZ-2G1B1 16GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
Micron Technology 16ATF2G64HZ-2G1B1 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
13.9
测试中的平均数值
更快的写入速度,GB/s
2,622.0
10.1
测试中的平均数值
需要考虑的原因
Micron Technology 16ATF2G64HZ-2G1B1 16GB
报告一个错误
低于PassMark测试中的延时,ns
36
77
左右 -114% 更低的延时
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
36
读取速度,GB/s
3,405.2
13.9
写入速度,GB/s
2,622.0
10.1
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
763
2581
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Unifosa Corporation HU564404EP0200 4GB
A-DATA Technology DDR4 2133 2OZ 8GB
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 16ATF2G64HZ-2G1B1 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2133C15-16GFT 16GB
G Skill Intl F4-4400C19-8GTZSW 8GB
Corsair CMK16GX4M2K4000C19 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AO1P32NC8W1-BDAS 8GB
Crucial Technology CT51264BA1339.D16F 4GB
G Skill Intl F4-3600C19-8GSXW 8GB
TwinMOS 9DNPBNZB-TATP 4GB
Kingston 9905624-008.A00G 8GB
Apacer Technology 78.01GA0.9K5 1GB
Golden Empire CL16-16-16 D4-2400 8GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
Samsung 1600 CL10 Series 8GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology C 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT4G4DFS8266.M8FG 4GB
Kingston 99U5471-052.A00LF 8GB
Kingston KHX2666C16/8G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Mushkin MR[ABC]4U320GJJM8G 8GB
报告一个错误
×
Bug description
Source link