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A-DATA Technology AM2U16BC4P2-B05B 4GB
Samsung M474A1G43EB1-CRC 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB vs Samsung M474A1G43EB1-CRC 8GB

总分
star star star star star
A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

总分
star star star star star
Samsung M474A1G43EB1-CRC 8GB

Samsung M474A1G43EB1-CRC 8GB

差异 规格 评论

差异

A-DATA Technology AM2U16BC4P2-B05B 4GB 需要考虑的原因
A-DATA Technology AM2U16BC4P2-B05B 4GB
报告一个错误
Samsung M474A1G43EB1-CRC 8GB 需要考虑的原因
Samsung M474A1G43EB1-CRC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 26
    左右 -18% 更低的延时
  • 更快的读取速度，GB/s
    17.2 left arrow 14
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 9.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
A-DATA Technology AM2U16BC4P2-B05B 4GB
Samsung M474A1G43EB1-CRC 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 22
  • 读取速度，GB/s
    14.0 left arrow 17.2
  • 写入速度，GB/s
    9.1 left arrow 13.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2330 left arrow 2989

A-DATA Technology AM2U16BC4P2-B05B 4GB RAM的比较

Kingston EBJ81UG8BBW0-GN-F 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Samsung M474A1G43EB1-CRC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Samsung M474A1G43EB1-CRC 8GB
Samsung M474A1G43EB1-CRC 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
JUHOR JHD2666U1908JG 8GB
JUHOR JHD2666U1908JG 8GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
G Skill Intl F4-3200C16-4GRKD 4GB
G Skill Intl F4-3200C16-4GRKD 4GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston KP6FH5-MIE 32GB
Kingston KP6FH5-MIE 32GB
内存RAM
Crucial Technology CT51264BA160B.C16F 4GB
Crucial Technology CT51264BA160B.C16F 4GB
Corsair CMW16GX4M2C3200C14 8GB
Corsair CMW16GX4M2C3200C14 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston KHX4133C19D4/8GX 8GB
Kingston KHX4133C19D4/8GX 8GB
内存RAM
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
G Skill Intl F4-3600C16-8GTZR 8GB
G Skill Intl F4-3600C16-8GTZR 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
SK Hynix HMA81GS6DJR8N-XN 8GB
SK Hynix HMA81GS6DJR8N-XN 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-3600C17-8GTZ 8GB
G Skill Intl F4-3600C17-8GTZ 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-4000C16-16GTRSA 16GB
G Skill Intl F4-4000C16-16GTRSA 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Kingston KF3200C16D4/16GX 16GB
Kingston KF3200C16D4/16GX 16GB
内存RAM
Kingston 99U5474-022.A00LF 2GB
Kingston 99U5474-022.A00LF 2GB
Corsair CMK16GX4M1E3200C16 16GB
Corsair CMK16GX4M1E3200C16 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-3300C16-16GTZSW 16GB
G Skill Intl F4-3300C16-16GTZSW 16GB
内存RAM