A-DATA Technology AM2U16BC4P2-B05B 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

总分

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

差异规格评论

差异

A-DATA Technology AM2U16BC4P2-B05B 4GB

需要考虑的原因
A-DATA Technology AM2U16BC4P2-B05B 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 31

左右 16% 更低的延时
更快的读取速度，GB/s

14 12.5

测试中的平均数值

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

报告一个错误

更快的写入速度，GB/s

9.4 9.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

A-DATA Technology AM2U16BC4P2-B05B 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 31
读取速度，GB/s

14.0 12.5
写入速度，GB/s

9.1 9.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2330 2361

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Kingston ACR26D4U9S8MH-8 8GB

Kingston ACR26D4U9S8MH-8 8GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Kingston KF3600C18D4/32GX 32GB

Kingston KF3600C18D4/32GX 32GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Crucial Technology CT4G4DFS824A.C8FBR2 4GB

Crucial Technology CT4G4DFS824A.C8FBR2 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Kingston 99P5723-006.A00G 8GB

Kingston 99P5723-006.A00G 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Corsair CMR16GX4M2F4000C19 8GB

Corsair CMR16GX4M2F4000C19 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Corsair CMT64GX4M4K3600C18 16GB

Corsair CMT64GX4M4K3600C18 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Micron Technology 8ATF51264AZ-2G1A2 4GB

Micron Technology 8ATF51264AZ-2G1A2 4GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.A1GC6.9H10C 2GB

Corsair CMV8GX4M1A2133C15 8GB

Corsair CMV8GX4M1A2133C15 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Micron Technology 8ATF1G64HZ-2G6B1 8GB

Micron Technology 8ATF1G64HZ-2G6B1 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Corsair CM4X16GD3200C16K2E 16GB

Corsair CM4X16GD3200C16K2E 16GB