A-DATA Technology DDR2 800G 2GB vs Crucial Technology CT16G4DFD8213.C16FAD 16GB

总分

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

总分

Crucial Technology CT16G4DFD8213.C16FAD 16GB

Crucial Technology CT16G4DFD8213.C16FAD 16GB

差异规格评论

差异

A-DATA Technology DDR2 800G 2GB

需要考虑的原因
A-DATA Technology DDR2 800G 2GB

报告一个错误

更快的读取速度，GB/s

5 15.6

测试中的平均数值
更快的写入速度，GB/s

2,343.1 10.2

测试中的平均数值

Crucial Technology CT16G4DFD8213.C16FAD 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8213.C16FAD 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 49

左右 -44% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR2 800G 2GB

Crucial Technology CT16G4DFD8213.C16FAD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 34
读取速度，GB/s

5,135.8 15.6
写入速度，GB/s

2,343.1 10.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

843 2795

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208

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Kingston 9905713-017.A00G 4GB