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A-DATA Technology DDR2 800G 2GB
G Skill Intl F4-3333C16-8GTZB 8GB

A-DATA Technology DDR2 800G 2GB vs G Skill Intl F4-3333C16-8GTZB 8GB

总分
star star star star star
A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

总分
star star star star star
G Skill Intl F4-3333C16-8GTZB 8GB

G Skill Intl F4-3333C16-8GTZB 8GB

差异 规格 评论

差异

A-DATA Technology DDR2 800G 2GB 需要考虑的原因
A-DATA Technology DDR2 800G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 18.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,343.1 left arrow 14.1
    测试中的平均数值
G Skill Intl F4-3333C16-8GTZB 8GB 需要考虑的原因
G Skill Intl F4-3333C16-8GTZB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 49
    左右 -133% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DDR2 800G 2GB
G Skill Intl F4-3333C16-8GTZB 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 21
  • 读取速度，GB/s
    5,135.8 left arrow 18.7
  • 写入速度，GB/s
    2,343.1 left arrow 14.1
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    843 left arrow 3380

A-DATA Technology DDR2 800G 2GB RAM的比较

Corsair CMK16GX4M2B3200C16 8GB
G Skill Intl F4-4266C19-32GTZR 32GB

G Skill Intl F4-3333C16-8GTZB 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT8G48C40U5.M4A1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB
Crucial Technology 8G4US2400.M8B1 8GB
Crucial Technology 8G4US2400.M8B1 8GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
G Skill Intl F4-3333C16-8GTZB 8GB
G Skill Intl F4-3333C16-8GTZB 8GB
内存RAM
SK Hynix HMAA1GS6CJR6N-XN 8GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
Crucial Technology CT16G4SFS832A.C8FE 16GB
Crucial Technology CT16G4SFS832A.C8FE 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT4G4SFS8213.C8FBD1 4GB
Crucial Technology CT4G4SFS8213.C8FBD1 4GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMR64GX4M4C3466C16 16GB
Corsair CMR64GX4M4C3466C16 16GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Essencore Limited KD4AGU880-32A160X 16GB
Essencore Limited KD4AGU880-32A160X 16GB
内存RAM
Mushkin 996902 2GB
Mushkin 996902 2GB
Corsair CMK16GX4M2Z2666C16 8GB
Corsair CMK16GX4M2Z2666C16 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
内存RAM
Kingston 99P5471-002.A00LF 2GB
Kingston 99P5471-002.A00LF 2GB
Samsung M474A1G43DB0-CPB 8GB
Samsung M474A1G43DB0-CPB 8GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT8G4DFD8213.M16FB 8GB
Crucial Technology CT8G4DFD8213.M16FB 8GB
内存RAM
Kingston KHX1600C9S3L/8G 8GB
Kingston KHX1600C9S3L/8G 8GB
Corsair CMT64GX4M2C3600C18 32GB
Corsair CMT64GX4M2C3600C18 32GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Corsair CMD32GX4M4B3600C16 8GB
Corsair CMD32GX4M4B3600C16 8GB
内存RAM
Samsung M395T5160QZ4-CE66 2GB
Samsung M395T5160QZ4-CE66 2GB
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
内存RAM