A-DATA Technology DDR2 800G 2GB vs G Skill Intl F4-3600C17-16GTZSW 16GB

总分

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

总分

G Skill Intl F4-3600C17-16GTZSW 16GB

G Skill Intl F4-3600C17-16GTZSW 16GB

差异规格评论

差异

A-DATA Technology DDR2 800G 2GB

需要考虑的原因
A-DATA Technology DDR2 800G 2GB

报告一个错误

更快的读取速度，GB/s

5 18.3

测试中的平均数值
更快的写入速度，GB/s

2,343.1 17.7

测试中的平均数值

G Skill Intl F4-3600C17-16GTZSW 16GB

需要考虑的原因
G Skill Intl F4-3600C17-16GTZSW 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 49

左右 -81% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR2 800G 2GB

G Skill Intl F4-3600C17-16GTZSW 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 27
读取速度，GB/s

5,135.8 18.3
写入速度，GB/s

2,343.1 17.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

843 3956

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

G Skill Intl F4-3600C17-16GTZSW 16GB

G Skill Intl F4-3600C17-16GTZSW 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Kingston 9905625-036.A00G 16GB

Kingston 9905625-036.A00G 16GB

A-DATA Technology AM1L16BC4R1-B1MS 4GB

A-DATA Technology AM1L16BC4R1-B1MS 4GB

SK Hynix GKE160UD102408-2133 16GB

SK Hynix GKE160UD102408-2133 16GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Apacer Technology 78.C2GFL.C720B 8GB

Apacer Technology 78.C2GFL.C720B 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N

Corsair CM3X1G1600C9DHX 1GB

Corsair CM3X1G1600C9DHX 1GB

JUHOR JHD2666U1916JG 16GB

JUHOR JHD2666U1916JG 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Samsung M378A1K43BB2-CRC 8GB

Samsung M378A1K43BB2-CRC 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT8G4SFD824A.C16FF 8GB

Crucial Technology CT8G4SFD824A.C16FF 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM4X8GE2400C16K4 8GB

Corsair CM4X8GE2400C16K4 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Essencore Limited KD48GU880-32A160U 8GB

Essencore Limited KD48GU880-32A160U 8GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Avant Technology W642GU42J5213N8 16GB

Avant Technology W642GU42J5213N8 16GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Kingston 9905703-008.A00G 16GB

Kingston 9905703-008.A00G 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

G Skill Intl F4-3000C16-8GVRB 8GB

G Skill Intl F4-3000C16-8GVRB 8GB