A-DATA Technology DDR2 800G 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

A-DATA Technology DDR2 800G 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

总分

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

差异规格评论

差异

A-DATA Technology DDR2 800G 2GB

需要考虑的原因
A-DATA Technology DDR2 800G 2GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

报告一个错误

低于PassMark测试中的延时，ns

40 49

左右 -23% 更低的延时
更快的读取速度，GB/s

9.1 5

测试中的平均数值
更快的写入速度，GB/s

6.9 2,343.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR2 800G 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

49 40
读取速度，GB/s

5,135.8 9.1
写入速度，GB/s

2,343.1 6.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, TBD1 V tolerant, TBD2 V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

843 2031

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR256X64D3S1333C9 2GB

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Teikon TMA81GS6AFR8N-UHSC 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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G Skill Intl F4-2933C14-16GFX 16GB