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A-DATA Technology DDR2 800G 2GB
Kingston HX424C15FB/8 8GB

A-DATA Technology DDR2 800G 2GB vs Kingston HX424C15FB/8 8GB

总分
star star star star star
A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

总分
star star star star star
Kingston HX424C15FB/8 8GB

Kingston HX424C15FB/8 8GB

差异 规格 评论

差异

A-DATA Technology DDR2 800G 2GB 需要考虑的原因
A-DATA Technology DDR2 800G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 15.9
    测试中的平均数值
Kingston HX424C15FB/8 8GB 需要考虑的原因
Kingston HX424C15FB/8 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 49
    左右 -123% 更低的延时
  • 更快的写入速度，GB/s
    9.8 left arrow 2,343.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DDR2 800G 2GB
Kingston HX424C15FB/8 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 22
  • 读取速度，GB/s
    5,135.8 left arrow 15.9
  • 写入速度，GB/s
    2,343.1 left arrow 9.8
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    843 left arrow 2684

A-DATA Technology DDR2 800G 2GB RAM的比较

Corsair CMK16GX4M2B3200C16 8GB
G Skill Intl F4-4266C19-32GTZR 32GB

Kingston HX424C15FB/8 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
GIGA - BYTE Technology Co Ltd GR26C16S8K2HU416 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M378A1K43CB2-CRC 8GB
Samsung M378A1K43CB2-CRC 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Samsung M378A1K43BB1-CTD 16GB
Samsung M378A1K43BB1-CTD 16GB
内存RAM
Kingston KTC1G-UDIMM 1GB
Kingston KTC1G-UDIMM 1GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology BLS16G4S240FSD.16FBR 16GB
Crucial Technology BLS16G4S240FSD.16FBR 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
内存RAM
Corsair CMK32GX5M2B5600C36 16GB
Corsair CMK32GX5M2B5600C36 16GB
Patriot Memory (PDP Systems) PSD48G21332 8GB
Patriot Memory (PDP Systems) PSD48G21332 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
SK Hynix HMA41GR7BJR4N-UH 8GB
SK Hynix HMA41GR7BJR4N-UH 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
V-Color Technology Inc. TN416G26D819-SB 16GB
V-Color Technology Inc. TN416G26D819-SB 16GB
内存RAM
Gold Key Technology Co Ltd GKE800UD102408-2666 8GB
Gold Key Technology Co Ltd GKE800UD102408-2666 8GB
Patriot Memory (PDP Systems) PSD48G266681 8GB
Patriot Memory (PDP Systems) PSD48G266681 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905622-051.A00G 8GB
Kingston 9905622-051.A00G 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
Micron Technology 36ASF4G72PZ-2G3B1 32GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
Kingmax Semiconductor GLLH22F-18---------- 16GB
内存RAM