A-DATA Technology DDR3 1333G 2GB vs Kingston 99U5624-001.A00G 8GB

总分

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

总分

Kingston 99U5624-001.A00G 8GB

Kingston 99U5624-001.A00G 8GB

差异规格评论

差异

A-DATA Technology DDR3 1333G 2GB

需要考虑的原因
A-DATA Technology DDR3 1333G 2GB

报告一个错误

Kingston 99U5624-001.A00G 8GB

需要考虑的原因
Kingston 99U5624-001.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 40

左右 -18% 更低的延时
更快的读取速度，GB/s

15.8 13.6

测试中的平均数值
更快的写入速度，GB/s

11.6 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR3 1333G 2GB

Kingston 99U5624-001.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 34
读取速度，GB/s

13.6 15.8
写入速度，GB/s

7.8 11.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2097 2929

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M4 70T5663CZ3-CE6 2GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

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Micron Technology 8ATF1G64HZ-3G2J1 8GB

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Patriot Memory (PDP Systems) 3200 C16 Series 8GB

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Kingston 9905403-156.A00LF 2GB

G Skill Intl F4-3600C18-8GVK 8GB

G Skill Intl F4-3600C18-8GVK 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Corsair CMD16GX4M2K4133C19 8GB

Corsair CMD16GX4M2K4133C19 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

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G Skill Intl F4-4000C18-32GTZN 32GB

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Kingston 9905471-006.A00LF 4GB

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Kingston ACR512X64D3S13C9G 4GB

Crucial Technology CT8G4DFD8213.C16FAD1 8GB

Crucial Technology CT8G4DFD8213.C16FAD1 8GB