A-DATA Technology DDR3 1333G 2GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

总分

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

总分

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

差异规格评论

差异

A-DATA Technology DDR3 1333G 2GB

需要考虑的原因
A-DATA Technology DDR3 1333G 2GB

报告一个错误

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

需要考虑的原因
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 40

左右 -74% 更低的延时
更快的读取速度，GB/s

18.1 13.6

测试中的平均数值
更快的写入速度，GB/s

15.0 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR3 1333G 2GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 23
读取速度，GB/s

13.6 18.1
写入速度，GB/s

7.8 15.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2097 3317

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Kingston KHYXPX-HYJ 8GB

Kingston KHYXPX-HYJ 8GB

Kingston KTC1G-UDIMM 1GB

Kingston KTC1G-UDIMM 1GB

Apacer Technology 78.D2GF2.4010B 16GB

Apacer Technology 78.D2GF2.4010B 16GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

SK Hynix HMA851U6DJR6N-WM 4GB

SK Hynix HMA851U6DJR6N-WM 4GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Kingston LV36D4U1S8HD-8XR 8GB

Kingston LV36D4U1S8HD-8XR 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Crucial Technology BL8G36C16U4B.M8FE1 8GB

Crucial Technology BL8G36C16U4B.M8FE1 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Kingston KF3600C18D4/32GX 32GB

Kingston KF3600C18D4/32GX 32GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology CT4G4SFS8213.C8FBD1 4GB

Crucial Technology CT4G4SFS8213.C8FBD1 4GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Patriot Memory (PDP Systems) PSD48G21332 8GB

Patriot Memory (PDP Systems) PSD48G21332 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Golden Empire CL16-16-16 D4-3000 4GB

Golden Empire CL16-16-16 D4-3000 4GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-2666C18-16GRS 16GB

G Skill Intl F4-2666C18-16GRS 16GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Crucial Technology CT4G4SFS824A.C8FBD2 4GB

Crucial Technology CT4G4SFS824A.C8FBD2 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS8G4D26BFSE.16FB 8GB

Crucial Technology BLS8G4D26BFSE.16FB 8GB