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Kingston 9905403-156.A00LF 2GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
比较
Kingston 9905403-156.A00LF 2GB vs Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
总分
Kingston 9905403-156.A00LF 2GB
总分
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905403-156.A00LF 2GB
报告一个错误
低于PassMark测试中的延时,ns
18
23
左右 22% 更低的延时
需要考虑的原因
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
报告一个错误
更快的读取速度,GB/s
18.1
17.7
测试中的平均数值
更快的写入速度,GB/s
15.0
13.1
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Kingston 9905403-156.A00LF 2GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
18
23
读取速度,GB/s
17.7
18.1
写入速度,GB/s
13.1
15.0
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2926
3317
Kingston 9905403-156.A00LF 2GB RAM的比较
Super Talent L89 11/2011 LOGIN. 4GB
Samsung M393B1K70EB0-CH9 8GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Smart Modular SG564568FG8N6KF-Z2 2GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
Kingston 9905403-156.A00LF 2GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Apacer Technology 78.C1GET.9K10C 8GB
Kingston 9965596-019.B01G 4GB
SK Hynix HYMP125S64CP8-S6 2GB
Kingston XK2M26-MIE 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
Samsung M378B1G73QH0-CK0 8GB
G Skill Intl F4-3333C16-4GRKD 4GB
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Corsair CMY16GX3M4A2133C8 4GB
Kingston 9965684-013.A00G 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
takeMS International AG TMS2GB264D082-805G 2GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Kingston HP32D4U8S8HC-8XR 8GB
Micron Technology 8ATF1G64AZ-2G3A1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL16G36C16U4B.M8FB1 16GB
Samsung M471B5173EB0-YK0 4GB
Corsair CMK16GX4M2B3200C16 8GB
报告一个错误
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