Kingston 9905403-156.A00LF 2GB vs Samsung M393B1K70EB0-CH9 8GB

总分

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

总分

Samsung M393B1K70EB0-CH9 8GB

Samsung M393B1K70EB0-CH9 8GB

差异规格评论

差异

Kingston 9905403-156.A00LF 2GB

需要考虑的原因
Kingston 9905403-156.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

18 53

左右 66% 更低的延时
更快的读取速度，GB/s

17.7 7.5

测试中的平均数值
更快的写入速度，GB/s

13.1 7.9

测试中的平均数值

Samsung M393B1K70EB0-CH9 8GB

需要考虑的原因
Samsung M393B1K70EB0-CH9 8GB

报告一个错误

规格

完整的技术规格清单

Kingston 9905403-156.A00LF 2GB

Samsung M393B1K70EB0-CH9 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

18 53
读取速度，GB/s

17.7 7.5
写入速度，GB/s

13.1 7.9
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2926 1833

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A2K43CB1-CRCR 16GB

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SK Hynix DDR2 800 2G 2GB

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ASint Technology SSA302G08-EGN1C 4GB

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Apacer Technology 78.C1GQB.4032B 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

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Samsung M3 78T5663RZ3-CF7 2GB

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