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Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
比较
Samsung M378B5773DH0-CH9 2GB vs Samsung M378B5773CH0-CH9 2GB
总分
Samsung M378B5773DH0-CH9 2GB
总分
Samsung M378B5773CH0-CH9 2GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378B5773DH0-CH9 2GB
报告一个错误
需要考虑的原因
Samsung M378B5773CH0-CH9 2GB
报告一个错误
更快的读取速度,GB/s
12.8
11.7
测试中的平均数值
更快的写入速度,GB/s
7.4
7.2
测试中的平均数值
规格
完整的技术规格清单
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
39
39
读取速度,GB/s
11.7
12.8
写入速度,GB/s
7.2
7.4
内存带宽,mbps
10600
10600
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
排名PassMark (越多越好)
1749
1770
Samsung M378B5773DH0-CH9 2GB RAM的比较
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB RAM的比较
Kingston 99U5458-001.A00LF 2GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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A-DATA Technology DQKD1A08 1GB
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Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
AMD R538G1601U2S 8GB
Crucial Technology BL32G32C16U4W.M16FB1 32GB
Kingston ACR512X64D3S13C9G 4GB
Smart Modular SF4641G8CKHI6DFSDS 8GB
Kingston 9905316-106.A02LF 1GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Samsung M393B1K70QB0-CK0 8GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600
G Skill Intl F3-2400C11-8GSR 8GB
Maxsun MSD44G24Q0 4GB
Samsung M378B5673EH1-CF8 2GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
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