A-DATA Technology DDR3 1600 4GB vs Corsair CMWX8GF2933Z16W4 8GB

总分

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

总分

Corsair CMWX8GF2933Z16W4 8GB

Corsair CMWX8GF2933Z16W4 8GB

差异规格评论

差异

A-DATA Technology DDR3 1600 4GB

需要考虑的原因
A-DATA Technology DDR3 1600 4GB

报告一个错误

Corsair CMWX8GF2933Z16W4 8GB

需要考虑的原因
Corsair CMWX8GF2933Z16W4 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 41

左右 -37% 更低的延时
更快的读取速度，GB/s

16.1 14

测试中的平均数值
更快的写入速度，GB/s

13.9 8.5

测试中的平均数值
更高的内存带宽，mbps

23400 10600

左右 2.21 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR3 1600 4GB

Corsair CMWX8GF2933Z16W4 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 30
读取速度，GB/s

14.0 16.1
写入速度，GB/s

8.5 13.9
内存带宽，mbps

10600 23400

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-23400, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

2324 3272

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Kingston ASU21D4U5S8MB-8 8GB

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SK Hynix HMT41GU7MFR8A-H9 8GB

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Samsung M471A2K43CB1-CTCT 16GB

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SanMax Technologies Inc. SMD-8G28HP-21P 8GB

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Kingston 9905471-006.A01LF 4GB

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Samsung SF4641G8CKHI6DFSDS 8GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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Samsung M378A2K43CB1-CRC 16GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

Mushkin 99[2/7/4]200F 8GB

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AMD R538G1601U2S 8GB

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Micron Technology 4ATF51264AZ-2G3B1 4GB

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Corsair CM3X8GA2400C11Y2R 8GB

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Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Corsair CMG32GX4M2E3200C16 16GB

Corsair CMG32GX4M2E3200C16 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

SK Hynix HMA81GS6AFR8N-VK 8GB

SK Hynix HMA81GS6AFR8N-VK 8GB

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

Corsair CMK16GX4M2Z4000C18 8GB

Corsair CMK16GX4M2Z4000C18 8GB

Unigen Corporation U51U6411P8DU-BD1 4GB

Unigen Corporation U51U6411P8DU-BD1 4GB

Asgard VMA42UG-MEC1U2AW1 8GB

Asgard VMA42UG-MEC1U2AW1 8GB