Samsung M378B5273CH0-CH9 4GB vs Corsair CMG32GX4M2E3200C16 16GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

Corsair CMG32GX4M2E3200C16 16GB

Corsair CMG32GX4M2E3200C16 16GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

Corsair CMG32GX4M2E3200C16 16GB

需要考虑的原因
Corsair CMG32GX4M2E3200C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 37

左右 -28% 更低的延时
更快的读取速度，GB/s

17.6 13.2

测试中的平均数值
更快的写入速度，GB/s

13.2 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

Corsair CMG32GX4M2E3200C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 29
读取速度，GB/s

13.2 17.6
写入速度，GB/s

8.4 13.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 3412

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

Crucial Technology BLT4G4D26AFTA.8FBD 4GB

Crucial Technology BLT4G4D26AFTA.8FBD 4GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

King Tiger Technology Tigo-X3-3200MHz-8G 8GB

King Tiger Technology Tigo-X3-3200MHz-8G 8GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Crucial Technology CT16G4DFD8213.C16FAD 16GB

Crucial Technology CT16G4DFD8213.C16FAD 16GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Apacer Technology 78.B1GM3.AF00B 4GB

Apacer Technology 78.B1GM3.AF00B 4GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

G Skill Intl F4-3200C16-8GVGB 8GB

G Skill Intl F4-3200C16-8GVGB 8GB

Crucial Technology RM51264BA1339.16FR 4GB

Crucial Technology RM51264BA1339.16FR 4GB

Ramaxel Technology RMSA3270ME86H9F-2666 4GB

Ramaxel Technology RMSA3270ME86H9F-2666 4GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

G Skill Intl F4-3200C15-8GVK 8GB

G Skill Intl F4-3200C15-8GVK 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Kingston XF875V-MIH 8GB

Kingston XF875V-MIH 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

SK Hynix HMA851U6DJR6N-WM 4GB

SK Hynix HMA851U6DJR6N-WM 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Kingston HX426C16FB2/8-SP 8GB

Kingston HX426C16FB2/8-SP 8GB

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

Crucial Technology CT8G4DFD8213.C16FADP 8GB

Crucial Technology CT8G4DFD8213.C16FADP 8GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Kingston HP26D4S9S8HJ-8 8GB

Kingston HP26D4S9S8HJ-8 8GB