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TwinMOS 9DNPBNZB-TATP 4GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB

TwinMOS 9DNPBNZB-TATP 4GB vs Crucial Technology CT8G4DFD8213.C16FADP 8GB

总分
star star star star star
TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

总分
star star star star star
Crucial Technology CT8G4DFD8213.C16FADP 8GB

Crucial Technology CT8G4DFD8213.C16FADP 8GB

差异 规格 评论

差异

TwinMOS 9DNPBNZB-TATP 4GB 需要考虑的原因
TwinMOS 9DNPBNZB-TATP 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 73
    左右 66% 更低的延时
  • 更快的写入速度，GB/s
    8.4 left arrow 7.8
    测试中的平均数值
Crucial Technology CT8G4DFD8213.C16FADP 8GB 需要考虑的原因
Crucial Technology CT8G4DFD8213.C16FADP 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.5 left arrow 12.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
TwinMOS 9DNPBNZB-TATP 4GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 73
  • 读取速度，GB/s
    12.5 left arrow 14.5
  • 写入速度，GB/s
    8.4 left arrow 7.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2180 left arrow 1736

TwinMOS 9DNPBNZB-TATP 4GB RAM的比较

Samsung M378B2873FHS-CH9 1GB
Kingston KHX2666C16/8G 8GB

Crucial Technology CT8G4DFD8213.C16FADP 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C16-8GTZKK 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Crucial Technology CT51264BD1339.M16F 4GB
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Corsair CMSA8GX3M2A1333C9 4GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Corsair CMR16GX4M2A2666C16 8GB
Corsair CMR16GX4M2A2666C16 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Essencore Limited KD48GU880-32A160U 8GB
Essencore Limited KD48GU880-32A160U 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C16-8GVSB 8GB
G Skill Intl F4-3200C16-8GVSB 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
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Corsair CMD16GX4M2B3600C18 8GB
Corsair CMD16GX4M2B3600C18 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-3200C16-4GVRB 4GB
G Skill Intl F4-3200C16-4GVRB 4GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston K821PJ-MIB 16GB
Kingston K821PJ-MIB 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-2133C15-8GVK 8GB
G Skill Intl F4-2133C15-8GVK 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3000C15-8GVGB 8GB
G Skill Intl F4-3000C15-8GVGB 8GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
Crucial Technology CT8G4SFRA266.C4FE 8GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Crucial Technology CB8GU2666.C8ET 8GB
Crucial Technology CB8GU2666.C8ET 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-2133C15-4GRK 4GB
G Skill Intl F4-2133C15-4GRK 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KYXC0V-MIB 16GB
Kingston KYXC0V-MIB 16GB
内存RAM