A-DATA Technology DDR3 1600 4GB vs Micron Technology 36ASF2G72PZ-2G1A2 16GB

总分

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

总分

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

差异规格评论

差异

A-DATA Technology DDR3 1600 4GB

需要考虑的原因
A-DATA Technology DDR3 1600 4GB

报告一个错误

低于PassMark测试中的延时，ns

41 52

左右 21% 更低的延时
更快的读取速度，GB/s

14 10.2

测试中的平均数值
更快的写入速度，GB/s

8.5 8.2

测试中的平均数值

Micron Technology 36ASF2G72PZ-2G1A2 16GB

需要考虑的原因
Micron Technology 36ASF2G72PZ-2G1A2 16GB

报告一个错误

更高的内存带宽，mbps

17500 10600

左右 1.65 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR3 1600 4GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 52
读取速度，GB/s

14.0 10.2
写入速度，GB/s

8.5 8.2
内存带宽，mbps

10600 17500

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17500, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz no data
排名PassMark (越多越好)

2324 2319

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD16GX4M4C3200C15 4GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Corsair CMW16GX4M2Z2933C16 8GB

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Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Samsung M471B5273CH0-CH9 4GB

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G Skill Intl F4-3333C16-16GTZKW 16GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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Crucial Technology CT25664AA800.M16FG 2GB

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Crucial Technology BL8G26C16U4R.8FD 8GB